| PART |
Description |
Maker |
| MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7177A C367177A |
From old datasheet system
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
| 2SC5488A12 2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
| MGFS36E2527 MGFS36E252707 |
2.5-2.7GHz HBT HYBRID IC
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
|
| BFG135 |
NPN 7GHz wideband transistor
|
Philips Semiconductors
|
